Contribution of both bulk and surface states on photothermoelectric transport in epitaxial Bi<sub>2</sub>Se<sub>3</sub> thin films

نویسندگان

چکیده

Probing the surface states in Bi2Se3 via electronic transport measurements is difficult due to significantly larger numbers of bulk carriers. Herein, we report contribution both and on measured photocurrent at room temperature electrical low temperatures an epitaxial thin film intrinsic capped with a high K dielectric, Al2O3. The continuously increases when gate voltage swept toward negative side from 10 −10 V, indicating movement Fermi level below conduction band edge. Moreover, state moves inside bandgap Dirac point. Furthermore, Seebeck coefficient (S) sweeping V. Similar correlations S value illustrate photothermoelectric effect states. Additionally, ambipolar charge was observed measurement 32 for four-probe configuration. possibly indicative transport.

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ژورنال

عنوان ژورنال: AIP Advances

سال: 2022

ISSN: ['2158-3226']

DOI: https://doi.org/10.1063/5.0091706